Regensburg 2000 – scientific programme

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DS: Dünne Schichten

DS 38: Postersitzung

DS 38.49: Poster

Tuesday, March 28, 2000, 09:30–17:30, Poster B

Phase Diagram and Characterisation of Indium-Tin-Oxide — •Nils Roos, Tamim P. Sidiki, and Clivia M. Sotomayor Torres — Inst. of Materials Science and Dept. of Electrical Engineering, BUGH Wuppertal

Indium-Tin-Oxide (ITO) films offer the unique property of a very low resistivity in the µ Ωcm range in combination with a high optical transparency. These are the basic requirements for having a top electrical contact for many device structures, such as solar cells or LEDs. This combination is possible, because ITO is a wide bandgap, degenerate n-type semiconductor. Up to now we have deposited various films on different substrates including glass, Si and photonic crystals, employing an evaporation process. We have found a dependence of the structural properties of the ITO films on the growth rate, growth temperature and oxygen partial pressure. Modifying these growth parameters we can achieve grainy or dendrite structures. Our films with a thickness of about 150nm have an optical transmission of around 80 - 90% and a sheet resistance of about 900 µ Ωcm. We present the phase diagram of ITO growth, correlating structural, optical and electrical properties