Regensburg 2000 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 12: Poster I: Quanten Hall Effekt (1-9), II-VI Halbleiter (10-17), Epitaxie (18-23), Quantenpunkte und -dr
ähte (24-50), Photonik (51-59), Metall-Isolator Übergang (60-64), Si/Ge (65-67), Elektronentheorie (68-69), Amorphe Halbleiter, Ionen-Implantation

HL 12.12: Poster

Montag, 27. März 2000, 14:00–19:00, A

MBE growth and thermal degradation of CdS islands on InP(001) — •Alexei Preobrajenski¹, Karl Barucki², and Thomas Chassé² — ¹W.-Ostwald-Institut f. Physikalische u. Theoretische Chemie, Linnéstr. 2, 04103 Leipzig — ²Institut f. Oberflächenmodifizierung, Permoser Str. 15, 04318 Leipzig

It was found recently that the lattice mismatch is

the main reason of CdSe and CdS quantum dots formation in

CdSe/ZnSe and CdS/ZnSe heterostructures grown by molecular-beam

epitaxy (MBE). In order to study other possible causes for II-VI

self-assembly depending on bonding properties of the elements

involved, we have investigated the

formation and thermal degradation of CdS nano-islands grown by

MBE on the InP(001)-(2x4) surface. Photoelectron spectroscopy

was used to study the reactivity of the interface and the growth

mode of CdS. Low-energy electron diffraction and angle-resolved

ultraviolet photoemisson were used to investigate the

development of crystallinity of the CdS layers with layer

thickness. The surface distribution and the shape of CdS islands

was examined by atomic force microscopy. In spite of almost

ideal lattice matching, the formation of self-assembled nano-

islands with a diameter-to height ratio close to 4:1 was found.

For purposes of comparison the MBE formation of the CdS/InP(110)

interface is investigated as well. Possible mechanisms of the