Regensburg 2000 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 12: Poster I: Quanten Hall Effekt (1-9), II-VI Halbleiter (10-17), Epitaxie (18-23), Quantenpunkte und -dr
ähte (24-50), Photonik (51-59), Metall-Isolator Übergang (60-64), Si/Ge (65-67), Elektronentheorie (68-69), Amorphe Halbleiter, Ionen-Implantation

HL 12.43: Poster

Montag, 27. März 2000, 14:00–19:00, A

STRUCTURE AND OPTICAL PROPERTIES OF Si/InAs/Si LAYERS GROWN BY MBE ON Si SUBSTRATE — •Peter Werner¹, N. Zakharov¹, U. Goesele¹, R. Heitz², D. Bimberg², N. Ledentsov³, V. Ustinov³, B. Volovik³, Zh. Alferov³, N. Polyakov³, V. Petrov³, V. Egorov³, and G. Cirlin³ — ¹Max-Planck-Institute of Microstructure Physics, Halle/Saale, Germany — ²Technical University of Berlin, Germany — ³A.F.Ioffe Physical-Technical Institute RAS, St.Petersburg, Russia

Si/InAs/Si structure grown by MBE on Si substrate and annealed at

800^∘C was investigated by High Resolution Transmission Electron

Microscopy (HRTEM). Extensive interdiffusion leads to an InAs solid

solution formation in the Si cap layer. Additionally, we find InAs

enriched regions with extensions of ∼ 6nm, which exhibit two kinds

of ordering. InAs molecules arrange, respectively, in (101) and

(101) planes inclined and (110) and (110) planes

parallel to the [001] growth direction. The ordering is

attributed to the energy gain from the reduced number of mixed Si-As and

Si-In bonds. The sample show photoluminescence in the 1.3 µm region,

which is tentatively attributed to the recombination of excitons

localised in the ordered regions. The decreased bandgap in together with

the small extension of such InAs-rich regions provide for efficient