Regensburg 2000 – scientific programme
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HL: Halbleiterphysik
HL 12: Poster I: Quanten Hall Effekt (1-9), II-VI Halbleiter (10-17), Epitaxie (18-23), Quantenpunkte und -dr
ähte (24-50), Photonik (51-59), Metall-Isolator Übergang (60-64), Si/Ge (65-67), Elektronentheorie (68-69), Amorphe Halbleiter, Ionen-Implantation
HL 12.47: Poster
Monday, March 27, 2000, 14:00–19:00, A
Edge States in the Lattice of Rectangular Quantum Well Wires — •V.A. Fonoberov1, E.P. Pokatilov1, V.M. Fomin1,2, and S.N. Balaban1 — 1Department of Theoretical Physics, State University of Moldova, MD-2009 Kishinev, Moldova — 2TFVS, Departement Natuurkunde, Universiteit Antwerpen (U.I.A.), B-2610 Antwerpen, Belgium
We consider a planar lattice of the parallel rectangular Quantum Well Wires (QWWs) GaAs/AlxGa1−xAs and InxGa1−xAs/InP. When the height of the internal barrier Vb differs from that of the external barrier V0, there appear energy levels that split off the minibands. For V0/Vb<1, such levels are lowered below the corresponding miniband, and the respective wave functions penetrate substantially the barrier region. In the opposite case (V0/Vb>1), the wave functions are almost completely localized in wires adjacent to the external barriers. The energy levels of edge states are calculated for minibands with energies E < min(V0, Vb) as a function of the ratio V0/Vb. The aforementioned effect compares with the above-quantum-step quasibound states that were experimentally observed in [1].
[1] W. Lu, Y. M. Mu, X. Q. Liu, X. S. Chen, M. F. Wan, G. L. Shi, Y. M. Qiao, S. C. Shen, Y. Fu, and M. Willander, Phys. Rev. B 57, 9787 (1998).