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HL: Halbleiterphysik
HL 12: Poster I: Quanten Hall Effekt (1-9), II-VI Halbleiter (10-17), Epitaxie (18-23), Quantenpunkte und -dr
ähte (24-50), Photonik (51-59), Metall-Isolator Übergang (60-64), Si/Ge (65-67), Elektronentheorie (68-69), Amorphe Halbleiter, Ionen-Implantation
HL 12.55: Poster
Montag, 27. März 2000, 14:00–19:00, A
Theoretical study of complete photonic band gaps for varying 2D filling patterns of elliptical type — •R. Hillebrand1 and W. Hergert2 — 1Max-Planck-Insitut of Microstructure Physics Halle — 2Martin-Luther-University Halle-Wittenberg, Department of Physics
Si-based photonic crystals (PCs) are subject of increasing interest. The porous structures are electro-chemically etched into Si wafers, providing 2D triangular PCs of high dielectric contrast. Processing SEM images proved that the pores, being originally considered as circular, reveal elliptical deformations.
The contribution presents theoretical results of band structure
calculations (plane wave approach, [1]), analysing the influence of
the pore roundness on the maximum complete gap size. Two modes of
elliptical pore growth are compared theoretically:
(i) the major axis of all pores being etched is constant,
(ii) the air filling factor (area) is the process constant.
The eccentricity and the angular orientation of the pores in the lattice
have been systematically varied. TM- and TE-polarizations, which decouple
for perpendicular incidence, are discussed for pore sizes quite near to
that circular pores, forming the maximum complete gap.
[1] R. Hillebrand, W. Hergert, and W. Harms, phys.stat.sol. (b), (1999) in press.