Regensburg 2000 – scientific programme

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HL: Halbleiterphysik

HL 12: Poster I: Quanten Hall Effekt (1-9), II-VI Halbleiter (10-17), Epitaxie (18-23), Quantenpunkte und -dr
ähte (24-50), Photonik (51-59), Metall-Isolator Übergang (60-64), Si/Ge (65-67), Elektronentheorie (68-69), Amorphe Halbleiter, Ionen-Implantation

HL 12.66: Poster

Monday, March 27, 2000, 14:00–19:00, A

In-Donor pairs in Si and Ge under uniaxial stress — •G. Tessema und R. Vianden — Institut für Strahlen- und Kernphysik, Univ. Bonn

Perturbed angular correlation spectroscopy has been used to study acceptor (¹¹¹In)-donor pairs under uniaxial tensile stress in Si and Ge. The formation of these pairs has been thoroughly studied by Wichert et al [1] and Forkel et al [2]. In view of recent theoretical calculation of the electric field gradient (EFG) present at the ¹¹¹In site of such pairs in Si and Ge [3], it is interesting to study the behavior of these complexes under mechanical tensile stress. Previous studies of complexes in semiconductors under tensile stress in our group have successfully contributed information on stress induced lattice deformation in Si and Ge [4,5]. Upon lowering the symmetry of the crystal lattices of the sample by uniaxial tensile stress, the EFG at the site of the complexes is expected to change. This leads to changes in the characteristic frequencies in PAC spectra. First results will be presented and discussed.

[1] Th. Wiechert and M.L. Swanson, J.Appl. Phys. 66(7), 3026, 1989

[2] D.Forkel, N. Achtziger, A. Baurichter, S. Deubler, M. Puschmann, H. Wolf and W. Witthuhn, Nuclear Instruments and Methods in Physics Research B63(North -Holland), 217-220, 1992

[3] M. Settels, Doctoral thesis, Jülich, 1999

[4] G. Marx and R. Vianden, Hyperfine Interactions 97/98, 211-219, 1996