Regensburg 2000 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 16: Störstellen/Grenz- und Oberfl
ächen I
HL 16.13: Vortrag
Dienstag, 28. März 2000, 12:30–12:45, H17
Structural, Optical and Electrical Characterisation of Si/Si1-xGex Multiple Quantum Wells grown by MBE and RTCVD — •Clivia M. Sotomayor Torres1, Tamim P. Sidiki1, Silke H. Christiansen2, Sebastian Chabert3, Wiebe b. de Boer4, and Horst P. Strunk2 — 1Institut f*r Materialwissenschaften, FB Elektrotechnik, Bergische Universitaet GH Wuppertal, D-42285 Wuppertal, Germany — 2Universitaet Erlangen, Institut fuer Werkstoffwissenschaften, Mikrocharakterisierung, Cauerstr.6, D-91058 Erlangen, Germany — 3Institut National des Sciences Appliquees, Departement de Genie Physique, F-31077 Toulouse, France — 4Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
We demonstrate that SiGe/Si interfacial potential fluctuations, within a high quality RTCVD grown multiple quantum well structure, lead to an efficient exciton localisation in the form of a strong blue shift of the low temperature exciton photoluminescence energy with increasing excitation power density. Moderate annealing of the sample at temperatures well below the growth temperature leads to the formation of striations only along the [011] direction. A study of the effect of different annealing temperatures on the D-line emission and striation structure is presented. Finally we also present first results on the characterisation of a light emitting diode using a transparent indium-tin-oxide layer as a top ohmic contact.