Regensburg 2000 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 16: Störstellen/Grenz- und Oberfl
ächen I
HL 16.6: Vortrag
Dienstag, 28. März 2000, 10:45–11:00, H17
Photovoltage phenomena in sintered porous layers of TiO2 — •Volodimyr Duzhko1, Victor Timoshenko2, and Thomas Dittrich1 — 1Technical University Munich, Physik Department E16, D-85748 Garching, Germany — 2M. V. Lomonossov Moscow State University, Faculty of Physics, 119899 Moscow, Russia
Sintered porous layers of TiO2 nanocrystals (with different
mean diameter between 5 and 60 nm) were investigated by methods
of pulsed and spectral photovoltage in the spctral range from
1 to 4 eV. The sign of the photovoltage was found to be positive.
The photovoltage amplitude depends on the mean diameter of the
nanocrystals and on the traps induced by adsorbed molecules. The
photovoltage amplitude increases irreversibly by more than 2
orders of magnitude after short vauumation of freshly prepared
porous TiO2 layers. This effect correlates with an increase
of the rise and decay times of the photovoltage transients.
Further, the photovoltage amplitude increases with increasing
diameter of the TiO2 nanocrystals. The mechanism of the
formation of the photovoltage signal in in porous TiO2 is
discussed on the basis of excess carrier diffusion and trapping
leading to optical doping of TiO2 nanocrystals.