Regensburg 2000 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 19: GaN I
HL 19.9: Vortrag
Dienstag, 28. März 2000, 17:00–17:15, H13
Magnesium doped GaN and AlGaN: Optical Properties and Acceptor g-values — •H. Alves1, W. Burkhardt1, D. M. Hofmann1, A. Hofstaetter1, F. H. Leiter1, N. G. Romanov2, and B. K. Meyer1 — 1I. Physikalisches Institut der Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen — 2A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia
We have studied by photoluminescence (PL) and
optically detected magnetic resonance (ODMR) MOVPE grown GaN:Mg and
AlGaN:Mg samples with different dopant concentrations and Al
contents.
In the GaN samples excitonic recombination, the violet
band (at 3.26 eV) and the blue band (at 2.8 eV) are observed. In the
excitonic range acceptor bound (A0X) and donor bound (D0X)
emission lines are detected. The energy positions and emission line
shapes are analysed in a model taking strain effects and
Stark-effects into account. The properties of the violet and blue
bands are studied by temperature and power dependence PL as well as
PLE measurements. This allows further insight in the compensation
processes and defect formation related with the Mg incorporation. The
ODMR results reveal the shallow Mg acceptor g-values, its dependence
on the Mg incorporation and Al concentration will be discussed.