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HL: Halbleiterphysik

HL 23: Grenz- und Oberfl
ächen II

HL 23.8: Vortrag

Mittwoch, 29. März 2000, 17:45–18:00, H17

Strain-induced lateral carrier confinement in an InGaAs- quantum well induced by a lateral surface grating — •U. Zeimer¹, J. Grenzer², U. Pietsch², F. B¹, V. Smirnitzki¹, S. Gramlich¹, M. Weyers¹, and G. Tränkle¹ — ¹Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Str. 11, 12489 Berlin, Germany — ²University of Potsdam, Institute of Physics, Am Neuen Palais 10, 14469 Potsdam, Germany

We report on the capability of a strain induced lateral carrier confinement inside a GaAs-InGaAs-single quantum well (SQW) caused by an overgrown and lateral patterned stressor layer. We investigated the strain distribution using X-ray grazing incidence diffraction as well as the strain induced change of the photoluminiscence (PL) spectrum. We found in the etched and nonetched region of the stressor layer an increase and a decrease of the strain, respectively, compared to the value of the SQW of the nonstructured material. This effect leads to the observed splitting of the PL line.