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HL: Halbleiterphysik

HL 24: Transporteigenschaften

HL 24.9: Vortrag

Mittwoch, 29. März 2000, 18:00–18:15, H14

Suspended nanostructures in Silicon-on-Insulator films — •L. Pescini, A. Tilke, R. H. Blick, H. Lorenz, and J. P. Kotthaus — CeNS and Sektion Physik, LMU München, Geschwister-Scholl-Platz 1, 80539 München

We have fabricated suspended silicon nanowires in highly doped silicon films in Silicon-on-Insulator substrates, using high-resolution electron-beam lithography and dry and wet etching techniques [1].

We present measurements showing strong nonlinearity in the conductance of the nanowires, indicating single electron effects due to the reduced dimensionality [2]. Furthermore, we observed distinct features in the nonlinear conductance indicating the importance of electron-phonon interaction in these devices. In fact, the thermal decoupling of the suspended device from the substrate minimizes the influence of thermally activated phonons and may eventually allow to study the interaction of single electrons with phonon modes [3].

[1] L. Pescini, A. Tilke, R. H. Blick, H. Lorenz, J. P. Kotthaus, W. Eberhardt, and D. Kern, Nanotechnology 10, 4, (1999).

[2] A. Tilke, L. Pescini, R. H. Blick, H. Lorenz, and J. P. Kotthaus, submitted to Appl. Phys. A, (1999).

[3] D. S. Greywall, B. Yurke, P. A. Busch, S. C. Arney, Europhys. Lett., 34, 1, (1996).