Regensburg 2000 – scientific programme

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HL: Halbleiterphysik

HL 27: Poster II: SiC (1-7), Ultrakurzzeitdynamik (8-15), Halbleiterlaser (16-20), GaN (21-38), III-V Halbleiter (39-56), Photovoltaik (57-64), Störstellen (65-68), Tern
äre Halbleiter (69-70)

HL 27.54: Poster

Wednesday, March 29, 2000, 14:00–19:00, A

Size analysis of nanocrystals in semiconductor doped glasses with anomalous small-angle X-ray scattering and Raman scattering — •Gert Irmer¹, Prabhat Verma², Jochen Monecke¹, Günter Goerigk³, and Martin Herms⁴ — ¹Institut für Theoretische Physik, TU Bergakademie Freiberg, Bernhard-von-Cotta-Str. 4, D-09596 Freiberg — ²Dept. of Electronics and Information Science, Kyoto Institute of Technology, Kyoto 606-8585, Japan — ³DESY-HASYLAB, Notkestr. 85, 22603 Hamburg — ⁴Fraunhofer-Institut für Zerstörungsfreie Prüfverfahren, Krügerstr. 22, D-01326 Dresden

Semiconductor doped silicate glasses which contain CdS_xSe_1−x nanocrystallites of different mean crystallite radii and composition x were investigated. The confinement of such quantum dots for elementary excitations depends strongly on their size. In order to obtain particle size and size distribution, anomalous small angle X-ray scattering (ASAXS) and low-frequency inelastic Raman scattering measurements were performed.The results of Raman measurements agree well with those of ASAXS, if both the acoustic mode damping across the nanocrystallite-matrix interface and the particle size distribution are taken into account. The concentration of nanocrystallites in the glass matrix was determined by using the technique of contrast variation with different X-ray excitation energies near the K-absorption edge of selenium.