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HL: Halbleiterphysik

HL 29: Symposium: Infrarot-oberfl
ächenemittierende Halbleiterlaser

HL 29.3: Fachvortrag

Donnerstag, 30. März 2000, 11:30–12:00, H01

Long-wavelength vertical cavity lasers — •Mattias Hammar — Royal Institute of Technology, Department of Electronics, Electrum 229, S-16440 Kista, Sweden

Long-wavelength (1.3/1.55-um) vertical cavity lasers (VCLs) are of great interest for future high-capacity fiber-optical communication systems. However, in contrast to their short-wavelength counterparts operating below 1 um, which have seem a tremendous development during recent years, the progress of long-wavelength devices has been much slower. This is mainly due to intrinsic shortcomings of the InP material systems usually employed for long-wavelength devices. During the past few years we have examined different approaches for realizing long-wavelength VCLs operating at both 1.3 and 1.55 um. This includes all-monolithic InP based designs with semiconductor and dielectric distributed Bragg reflectors (DBRs), as well as devices incorporating one or two AlGaAs/GaAs DBRs using wafer fusion. In this talk, I will review these efforts and related results. I will also discuss the critical materials and processing concerns, such as DBR optimization, wafer fusion and current confinement schemes. Finally, I will also summarize some initial experiences with the GaInNAs material system for GaAs-based quantum wells for 1.3-um VCLs.