Regensburg 2000 – scientific programme

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HL: Halbleiterphysik

HL 30: Organische Bauelemente

HL 30.12: Talk

Thursday, March 30, 2000, 13:15–13:30, H13

Room temperature electroluminescence from silicon p-i-n - structures under pulsed operation — •Victor Timoshenko¹, Thomas Dittrich¹, Leonid Tsybeskov², and Joerg Rappich³ — ¹Technical University Munich, Physik Department E16, D-85748 Garching, Germany — ²University of Rochester, Department of Electrical and Computer Engineering, Rochester, NY 14627-0231, USA — ³Hahn-Meitner-Institute, Department of Photovoltaics, Kekulestr.5, D-12489 Berlin, Germany

Room temperature electroluminescence (1.1 eV) from a silicon

p-i-n - structure was studied for pulsed forward current

operation at different bias voltages. For the investigated

device, an external quantum efficiency of 0.002

and time constants shorter than 200 ns were reached by

application of reverse bias. The dependence of the quantum

efficiency on the injection level is discussed and ways for

improvement are proposed.