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Regensburg 2000 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 37: GaN II

HL 37.7: Vortrag

Donnerstag, 30. März 2000, 17:30–17:45, H15

Studies of the epitaxial direction relationship in 2H-AlN/Si(001) heterosystem — •Vadim Lebedev1, Ute Kaiser1, Joerg Jinschek1, Bernd Schroeter1, Wolfgang Richter1, and Juergen Kraeusslich21Universitaet Jena, Institut fuer Festkoerperphysik, 07743 Jena, Max-Wien-Platz 1 — 2Universitaet Jena, Institut fuer Optik und Quantenelektronik, 07743 Jena, Max-Wien-Platz 1

The epitaxial growth of crystalline wurtzite AlN thin films on

(001) Si substrates by plasma-assisted molecular beam epitaxy

(PAMBE) is reported. The nucleation and the growth dynamics have

been studied in-situ by reflection high energy electron

diffraction (RHEED). Cross-sectional transmission electron

microscopy (XTEM) investigation revealed a two-domain film

structure with a 30deg rotation between neighboring domain

orientations (AlN1and AlN2) and an epitaxial orientation

relationship of

[0002]AlN || [002]Si and <01-10>AlN1 || <-2110>AlN2|| [220]Si

resulting in a 12-fold crystallographic symmetry as the 2H-AlN

domains are rotated by 30deg with respect to each other. These

findings were also confirmed by X-ray diffraction and X-ray

photoelectron diffraction analysis. A model for the nucleation

and growth mechanism of 2H-AlN layers on Si(001) is proposed.

We assume that the single atomic step boundary structure of the

nominal Si(001) surface determines the two-domain character of

the films with nearly equivalent proportion of each domain type.

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