Regensburg 2000 – scientific programme

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HL: Halbleiterphysik

HL 38: Poster III: Transporteigenschaften (1-14), Optische Eigenschaften (15-31), Grenz-/Oberfl
ächen (32-44), Heterostrukturen (45-57), Bauelemente (58-67), Gitterdynamik (68-69), Diamant (70), Raster-Tunnel-Mikroskopie (71)

HL 38.25: Poster

Thursday, March 30, 2000, 14:00–19:00, B

Time-resolved Photoluminescence characterisation of PTCDA thin films on Si(111) — •A. Yu. Kobitski, G. Salvan, H. P. Wagner, and D. R. T. Zahn — Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany

3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) was deposited using organic molecular beam deposition (OMBD) onto hydrogen passivated Si(111). Time-resolved photoluminescence (PL) and PL excitation spectroscopy of PTCDA films of different thickness are measured ex-situ in a temperature range between 70 - 300 K. A broad PL band around 1.78 eV (commonly attributed to a self-trapped exciton recombination) with several sub-bands was observed. The decay of the PL intensity has a non-exponential character with a relaxation time depending on the observed energy. The origin of the sub-bands is discussed.