Regensburg 2000 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 38: Poster III: Transporteigenschaften (1-14), Optische Eigenschaften (15-31), Grenz-/Oberfl
ächen (32-44), Heterostrukturen (45-57), Bauelemente (58-67), Gitterdynamik (68-69), Diamant (70), Raster-Tunnel-Mikroskopie (71)
HL 38.35: Poster
Donnerstag, 30. März 2000, 14:00–19:00, B
Electrical and optical properties of SONOS structures — •Claudia Bunciu1, Hans Reisinger1, and Vesselinka Petrova-Koch2 — 1Infineon Technologies, CPR ST, Otto-Hahn-Ring 6, D-81739, Müchen — 2Zentrum für Osteuropa, Technische Universität Müchen, D-85747 Garching
We investigated a SONOS structure consisting of poly-Si, SiO2 (5 nm, top), Si3N4 (4 nm), SiO2 (2.4 - 3.2 nm, bottom) on <100> c-Si substrate, used in EEPROM technology.
The electrical measurements were done at room temperature. They consisted of several write / erase cycles, followed by the determination of the flat band voltage shift with help of capacitance - voltage measurements, correlated with an erase event. The flat band voltage shift increases with increasing of the thickness of the bottom oxide layer and with the amount of the trapped charge in the nitride layer.
The infrared measurements were performed to characterize the quality of the nitride and oxide layer and oxinitride interface. As reference we used a Si 3N4 layer, 100 nm thick, deposited with LPCVD technology on c-Si substrate, which showed the stretching mode at 829 cm−1. For a 6.2 and 3.8 nm thick nitride layers deposited by the same procedure on thermally grown SiO2 layer, the Si3N4 stretching mode shifts to 892 cm−1. In all the vibrational modes of SiO2 are shifted in average 25 cm−1. These facts point on a mixture between the two layers in the interfacial region.