Regensburg 2000 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 38: Poster III: Transporteigenschaften (1-14), Optische Eigenschaften (15-31), Grenz-/Oberfl
ächen (32-44), Heterostrukturen (45-57), Bauelemente (58-67), Gitterdynamik (68-69), Diamant (70), Raster-Tunnel-Mikroskopie (71)

HL 38.36: Poster

Donnerstag, 30. März 2000, 14:00–19:00, B

Spectromicroscopy of Dy silicides on Si(001) — •S. Vandré¹, C. Preinesberger¹, T. Kalka¹, W. Busse¹, M. Dähne-Prietsch¹, L. Casalis², L. Gregoratti², and M. Kiskinova² — ¹Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin — ²ELETTRA - Sincrotrone Trieste, Science Area Park, Basovizza, I-34012 Trieste

In contrast to the epitaxial growth on Si(111) [1,2], our STM experiments on the annealed Dy/Si(001) interface reveal the formation of self-organized low-dimensional structures. In the monolayer range a close-packed arrangement of wires is observed at 500 ^∘C, while more extended and isolated wires are formed at 600 ^∘C. At higher coverages, large rectangular clusters are found, surrounded by troughs in the substrate [3]. Scanning photoemission microscopy performed at the ESCA microscopy beamline at ELETTRA has shown a variety of spectral components that vary considerably with the preparation conditions. From the chemical maps and the Si-2p, Dy-4d and Dy-4f spectra acquired on selected microspots we determined the lateral variations in the chemical composition and electronic structure. A band bending as low as 0.15 ± 0.05 was found.

[1] S. Vandré, T. Kalka, C. Preinesberger, and M. Dähne-Prietsch, Phys. Rev. Lett. 82, 1927 (1999)

[2] S. Vandré, T. Kalka, C. Preinesberger, and M. Dähne-Prietsch, J. Vac. Sci. Technol., B 17, 1682 (1999)

[3] C. Preinesberger, S. Vandré, T. Kalka, M. Dähne-Prietsch, J. Phys D 31, 43 (1998)