Regensburg 2000 – scientific programme

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HL: Halbleiterphysik

HL 38: Poster III: Transporteigenschaften (1-14), Optische Eigenschaften (15-31), Grenz-/Oberfl
ächen (32-44), Heterostrukturen (45-57), Bauelemente (58-67), Gitterdynamik (68-69), Diamant (70), Raster-Tunnel-Mikroskopie (71)

HL 38.42: Poster

Thursday, March 30, 2000, 14:00–19:00, B

Characterisation of Low Temperature Wafer Bonding by Infrared Spectroscopy — •A. Milekhin^1,2, M. Friedrich¹, K. Hiller³, M. Wiemer³, T. Gessner³, and D.R.T. Zahn¹ — ¹Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany — ²Institute of Semiconductor Physics, 630090 Novosibirsk, Russia — ³Zentrum für Mikrotechnologien, Technische Universität Chemnitz, D-09107 Chemnitz, Germany

We present the results of an infrared (IR) spectroscopical investigation of interfaces between two hydrophilic Si wafers bonded at low temperature. Multiple internal transmission IR spectra of the bonds with different chemical pre-treatments of Si surfaces employed before bonding were recorded. The changes in the chemical species monitored by IR spectroscopy provide valuable and detailed information about bonding mechanisms even at low temperature. The analysis of IR spectra shows that the number of O-H and H-Si-O_x species at the interface depends strongly on the chemical pre-treatment type which determines the bonding energy. The annealing procedure used in the bonding process leads to dissociation of water molecules, oxidation of silicon at the interfaces and diffusion of hydrogen into the silicon oxide layer formed at the interface. The difference in bonding processes is discussed.