Regensburg 2000 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 38: Poster III: Transporteigenschaften (1-14), Optische Eigenschaften (15-31), Grenz-/Oberfl
ächen (32-44), Heterostrukturen (45-57), Bauelemente (58-67), Gitterdynamik (68-69), Diamant (70), Raster-Tunnel-Mikroskopie (71)

HL 38.65: Poster

Donnerstag, 30. März 2000, 14:00–19:00, B

Study of hot spots in electronic devices by scanning thermoelastic microscopy — •Hans-Helmar Althaus¹, F. Niebiesch¹, J. Bolte¹, D. Dietzel¹, J. Pelzl¹, P. Stelmaczyk², A.D. Wieck², and M. Versen³ — ¹Experimentalphysik III, Festkörperspektroskopie, Ruhr-Universität Bochum — ²Experimentalphysik VI, Angewandte Festkörperphysik, Ruhr-Universität Bochum — ³Institut für Werkstoffe der Elektrotechnik, Ruhr-Universität Bochum

The local thermoelastic expansion of a modulated heated sample

has been used to study on submicrometer scale local heat-

sources of electronic devices. The temperature induced vertical

expansion and the topographic information of the samples have

been measured simultaneously using an atomic force microscope

(AFM). The samples were an 4 *m wide conducting line and an

in-plane-gate-transistor (IPG), oscillatory heating of the

samples has been achieved by applying a modulated drain-source-

voltage. The expansion signal has been measured at the frequency

of the thermal modulation. The vertical thermoelastic

displacement was calibrated by means of the piezoelectric

reference sample under beneath the semiconductor device. The

achieved lateral resolution of our scanning thermoelastic

microscope (STEM) is below 50 nm. By supplementary experiments

other than thermoelastic contributions were investigated but no

significant influence was observed.