Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 38: Poster III: Transporteigenschaften (1-14), Optische Eigenschaften (15-31), Grenz-/Oberfl
ächen (32-44), Heterostrukturen (45-57), Bauelemente (58-67), Gitterdynamik (68-69), Diamant (70), Raster-Tunnel-Mikroskopie (71)

HL 38.72: Poster

Donnerstag, 30. März 2000, 14:00–19:00, B

Resonant quantum transport in semiconductor nanostructures — •E. R. Racec ^1,2 and Ulrich Wulf¹ — ¹Technische Universität Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany — ²Faculty of Physics, University of Bucharest, Solid State Department, P.O. Box MG-11, Romania

We develop a theory of resonant transport in semiconductor nanostructures. To separate weakly from strongly energy-dependent contributions on the scale of the width of the resonance we employ a representation of the S-matrix in terms of the R-matrix. Linearization of the weakly energy-dependent parts yields a simple numerical procedure to determine the poles of the S-matrix in the complex energy plane which gives the position and the width of the lines. We further obtain an analytical expression for the line shape which is a generalization of the known Fano profile. In contrast to the Fano profile our general line shape shows no unphysical zero of the transmission in the vicinity of the maximum. Numerical results show the remarkable accuracy of our procedure which is applicable to a great variety of resonance types like Fabry-Perot resonances, Fowler-Nordheim resonances, quasi-bound states, and resonances with negative total energies.