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HL: Halbleiterphysik

HL 38: Poster III: Transporteigenschaften (1-14), Optische Eigenschaften (15-31), Grenz-/Oberfl
ächen (32-44), Heterostrukturen (45-57), Bauelemente (58-67), Gitterdynamik (68-69), Diamant (70), Raster-Tunnel-Mikroskopie (71)

HL 38.7: Poster

Donnerstag, 30. März 2000, 14:00–19:00, B

Influence of scattering centers realised by ion implantation on ballistic electron transport — •Sascha Hoch, Dorina Diaconescu, Dirk Reuter, and Andreas D. Wieck — Lehrstuhl für angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum

We investigate the ballistic electron transport in a two dimensional electron gas (2DEG) realised in high quality Al_xGa_1−xAs/GaAs heterostructures. Due to the high electron mobilites the mean free path of the electrons is about 40 µm at 4 K. We defined four terminal structures by chemical etching and measured the bend resistance in a variable magnetic field. From measurements for different structure sizes we were able to determine the ballistic length of 45 µm at 4 K. This value correspond very well with the mean free path. The ballistic transport properties are very sensitive to scattering events, so that even a low dose implantation should manifest itself in a reduced bend resistance. We try to reduce the implanted dose of ions to the limit of single ion implantation.