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HL: Halbleiterphysik

HL 38: Poster III: Transporteigenschaften (1-14), Optische Eigenschaften (15-31), Grenz-/Oberfl
ächen (32-44), Heterostrukturen (45-57), Bauelemente (58-67), Gitterdynamik (68-69), Diamant (70), Raster-Tunnel-Mikroskopie (71)

HL 38.9: Poster

Donnerstag, 30. März 2000, 14:00–19:00, B

Impact Ionization and Intracollisional Field Effect — •Niels Fitzer¹, Ronald Redmer¹, Justino R. Madureira¹, and Wolgang Schattke² — ¹Univ. Rostock, FB Physik, D-18051 Rostock — ²Univ. Kiel, Inst. f. Theor. und Astrophysik, Leibnizstr. 15, D-24118 Kiel

Impact ionization plays a crucial role for electron transport in

semiconductors at high electric fields. We derive appropriate

quantum kinetic equations for electron transport in semiconductors

within linear response theory. The field-dependent collision

integral is evaluated for the process of impact ionization. A

known, essentially analytical result is reproduced within the

parabolic band approximation [W. Quade et al.,

Phys. Rev. B 50, 7398 (1994)]. Based on the numerical

results for zero field strengths but realistic band structures, a

fit formula is proposed for the respective field-dependent

impact ionization rate. Explicit results are given for GaAs, Si,

GaN, ZnS, and SrS [ R. Redmer et al., J. Appl. Phys. (January 2000)].