Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 4: Heterostrukturen

HL 4.1: Vortrag

Montag, 27. März 2000, 10:30–10:45, H14

Electronic states and band alignment in GaInNAs/GaAs quantum well structures — •M. Hetterich¹, M.D. Dawson¹, A. Yu. Egorov², D. Bernklau², and H. Riechert² — ¹Institute of Photonics, University of Strathclyde, Glasgow G4 0NW, Scotland, UK — ²Infineon Technologies, Corporate Research CPR7, D-81730 Munich, Germany

GaInNAs/GaAs is a novel semiconductor material system promising for the realisation of high-performance laser diodes emitting at the 1.3 µm fibre window. Advantages include the possiblility of monolithic GaAs-based vertical-cavity surface-emitting lasers and the expected larger conduction band offset in comparison to the more common GaInAsP system, which should result in a stronger electron confinement and thus in an improved high-temperature device performance.

In our contribution we investigate the optical properties of GaInNAs/GaAs multiple quantum well structures using mainly photoluminescence and (polarised) photoluminescence excitation measurements at low temperature. From theoretical fits to our experimental data we derive the band alignment in these structures. Additionally, our results suggest an increased effective electron mass in GaInNAs due to the interaction of the conduction band with nitrogen-related resonant states, an observation prospectively of benefit for GaInNAs-based diode lasers.