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HL: Halbleiterphysik
HL 5: Quantenpunkte und Quantendr
ähte: Theorie
HL 5.4: Vortrag
Montag, 27. März 2000, 11:15–11:30, H15
Exciton and Impurity States in Rectangular Quantum Well Wires — •V. A. Fonoberov1, E. P. Pokatilov1, V. M. Fomin1,2, S. N. Balaban1, and D. L. Nica1 — 1Department of Theoretical Physics, State University of Moldova, MD-2009 Kishinev, Moldova — 2TFVS, Departement Natuurkunde, Universiteit Antwerpen (U.I.A.), B-2610 Antwerpen, Belgium
We investigate exciton and impurity states in rectangular Quantum Well Wires (QWWs) GaAs/AlxGa1−xAs and InxGa1−xAs/InP. The electrostatic potentials of the electron-hole and electron-impurity interactions are found from the Poisson equation, taking into account different dielectric constants in the quantum well and in the barrier. The impurity energy levels are investigated for various impurity positions. The impurity and exciton states are analysed as a function of the transverse sizes of the QWW on the basis of the 4-band Luttinger Hamiltonian for a hole. The Hamiltonians of the exciton-phonon and impurity-phonon interactions are deduced for the QWWs and the polaron shifts of the energy levels are calculated. In a broad range of QWW widths our theory compares well with experiment [1, 2].
[1] M. Notomi, M. Naganuma, T. Nishida, T. Tamamura, H. Iwamura, S. Nojima, and M. Okamoto, Appl. Phys. Lett. 58, 720 (1991).
[2] P. Ils, M. Michel, A. Forchel, I. Gyuro, M. Klenk, and E. Zielinski, Appl. Phys. Lett. 64, 496 (1994).