Regensburg 2000 – scientific programme

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O: Oberflächenphysik

O 11: Postersession (Eröffnung)

O 11.14: Poster

Monday, March 27, 2000, 19:00–22:00, Bereich C

Epitaxial growth and surface superstructures of Si on SiC(0001) — •Ravil Akhtariev, Andreas Fissel, and Wolfgang Richter — Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, D-07743 Jena

The MBE growth of Si on SiC(0001) was studied by RHEED. We

demonstrate that despite the large misfit of 20

Stranski-Krastanov mode on SiC(0001). During the growth different

surface superstructures were observed, which were studied

regarding the Si coverage and thermal stability. Starting with an

(sqrt3xsqrt3)-structure of 1/3 ML Si coverage the following

structures were also found: (4x4) at 0.75 ML Si, a 2-fold

(2sqrt3x2sqrt13) /1/ at about 1.2 ML Si and (3x3) at 1.4 ML

Si. Whereas the (sqrt3xsqrt3) was found to be stable even at

T > 1500 K, the others are only stable at T < 1150 K (4x4), at

T < 1130 (2-fold) and T < 1300 K (3x3), resp.. Si island

formation occurs at coverages above 1.4 ML, where the size of

islands was reduced up to some nm (nanoclusters) by optimizing

the growth conditions. Two kinds of clusters were observed with

different orientations.

/1/ M.Naitoh, J.Takami, S.Nishigaki, N.Toyama, Appl.Phys.Lett. 75(1999)650