Regensburg 2000 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
O: Oberflächenphysik
O 21: Oberflächenreaktionen (II)
O 21.1: Talk
Tuesday, March 28, 2000, 16:15–16:30, H44
Stress-Stabilized Oxidation of Silicon — •Hans-Joachim Müssig, Jarek Dabrowski, Karl-Ernst Ehwald, and Peter Gaworzewski — Institute for Semiconductor Physics (IHP), Walter-Korsing-Str. 2, D-15230 Frankfurt (Oder), Germany
We show that Si(113) may be a competitive substrate material for silicon integrated circuits. High-quality SiO2/Si(113) films can be produced by standard oxidation techniques. Based on investigations of the initial stages of oxidation on Si(113) by scanning tunneling microscopy and ab initio calculations [1], we interpret this as an effect of tensile stress and reduced surface diffusivity on Si(113). To evaluate technological potential of Si(113), gate-controlled diodes were prepared on Si(113) and Si(001) under conditions optimized for Si(001). Electrical measurements demonstrate no significant differences in breakdown behavior and defect densities. We believe that optimization of the preparation conditions may lead to extremely thin, highly reliable gate oxides on Si(113).
[1] H.-J. Müssig, J. Dabrowski, S. Hinrich, MRS Symposium Proceedings 567 (1999) 169.