Regensburg 2000 – scientific programme

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SYGU: Grenzflächen zwischen unterschiedlichen Materialien

SYGU 2: Hauptvorträge

SYGU 2.5: Talk

Thursday, March 30, 2000, 17:15–17:30, H4

Densification of solution-grown ZrO₂ thin films on organic templates — •K. Ritley, K. P. Just, F. Schreiber, H. Dosch, T. P. Niesen, and F. Aldinger — Max-Planck-Institut fuer Metallforschung und ITAP, Uni-Stuttgart, Heisenbergstrasse 1, D-70569 Stuttgart

Thin films of ZrO₂ were deposited from aqueous solution on Si(100) substrates precovered by functionalized alkyltrichlorosilane self-assembled monolayers (SAMs). The interface structure, thermal stability and densification of these films in the temperature range from room temperature to 750 ^∘C in vacuum were measured using in situ x-ray reflectivity. The growth rate is a nonlinear function of time in solution, with a pronounced nonuniformity during the first 30 minutes. The as-deposited films exhibit about 3 nm roughness and a density below that of bulk ZrO₂. In situ measurements in vacuum reveal decreasing film thickness, increasing film density and decreasing roughness upon annealing up to 750 ^∘C. The densification saturates at the highest measured temperatures, presumably following evaporation of residual contaminants from the aqueous synthesis procedure. Above 300 C^∘ the SAM layer is found to structurally decompose. The ZrO₂ film structure obtained at the highest

annealing temperatures persists upon cooling to room temperature, and there is no visible evidence of stress-induced microstructural changes, such as peeling or cracking.