Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

TT: Tiefe Temperaturen

TT 7: Postersitzung I: Amorphe- und Tunnelsysteme (1-8), Mesoskopische Systeme (9-21), Schwere Fermionen (22-32), Kernmagnetismus (33-34), Josephson-Kontakte und SQUIDs (35-45), TT-Detektoren und Kryotechnik (46-49)

TT 7.20: Poster

Montag, 27. März 2000, 14:30–18:00, A

Coulomb Blockade in anodically oxidised Titanium wires — •Volker Schollmann, Jan Johannson, Karin Andersson, and David Haviland — Nanostructure Physics, KTH Stockholm, Sweden

We investigate the electrical transport properties of anodically oxidised thin Titanium (Ti) wires. The fabrication of the structures includes two steps of electron beam lithography (EBL). First the Ti wires are fabricated using a two layer resist lift off process. In the second step a new layer of resist is applied and a small window is opened above the Ti wires by EBL. The window defines the electrochemical cell for the anodic oxidation of the wire. The oxidation of the Ti wires can be controlled by adjusting the anodisation cell voltage while monitoring the resistance of the wire. The current voltage characteristics of wires fabricated using this technique display nonlinearities around the zero bias between 260mK and room temperatures. The modulation by a capacitively coupled gate electrode has only been achieved at temperatures below 1K.