Berlin 2001 – wissenschaftliches Programm
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MS: Massenspektrometrie
MS 5: Mass Spectrometry: Posters
MS 5.4: Poster
Dienstag, 3. April 2001, 12:30–15:00, AT2
Assessment of nitrogen concentration and distribution in compact nitrogen containing GaAs and in epitaxially grown GaAs1−xNx — •B. Wiedemann1, J. D. Meyer1, H. Ch. Alt2, A. Yu. Egorov3, and H. Riechert3 — 1Institute for Nuclear Physics, University of Frankfurt, D-60486 Frankfurt am Main, Germany — 2Engineering Physics, FHM - University of Applied Sciences, D-80001 Munich, Germany — 3Infineon Technologies, Corporate Research CPR 7, D-81730 Munich, Germany
Mass spectrometric, optical and nuclear physical measurements have been carried out on compact nitrogen containing GaAs and epitaxially grown GaAs1−xNx layers. Implantation of 14N and 15N at 3 MeV into GaAs shows that the local vibrational mode observed by low temperature FTIR at 473 cm− 1 resp. 458 cm−1 is due to isolated 14N resp. 15N atoms. Quantitatively the FTIR method is calibrated against the SSMS method with a calibration factor fN = [N]/Iα = 7.4·1015 cm−1 for the major isotope 14N at 471 cm−1 in compact GaAs. Nuclear channeling experiments by the 14N(d,α)12C reaction confirm that nitrogen is incorporated into GaAs1−xNx at the atomic sites of the GaAs host. Discussions of value with M. Jurisch of Freiberger Compound Materials are acknowledged.