Berlin 2001 – wissenschaftliches Programm

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P: Plasmaphysik

P 2: Plasma Technology, Diagnostics I

P 2.8: Vortrag

Montag, 2. April 2001, 18:25–18:40, 2032

Absolute EUV-emission from ultrafast high intensity laser excited Xe-clusters — •Matthias Schnürer¹, Sargis Ter-Avetisyan^1,2, Holger Stiel¹, Ullrich Vogt¹, Wolfgang Radloff¹, Wolfgang Sandner¹, and Peter Nickles¹ — ¹Max-Born-Institut, Max-Born-Str. 2a, D-12489 Berlin, Germany — ²Institute for Physical Research, Ashtarak-2, 378410, Armenia

High intensity laser interaction with large Xe-clusters (10⁵… 10⁶ atoms per cluster) has been carried out with 50 fs (∼ 2×10¹⁸ W/cm²) and 2 ps (∼ 5×10¹⁶ W/cm²) pulses from a Ti:Sa multi - TW laser at 800 nm center wavelength. Absolute EUV-emission in a wavelength range between 7 nm and 15 nm of the Xe-cluster plasma has been studied in respect to these excitation time scales which are much shorter or similar to the cluster disassembly time (ps-range). Optimization of the EUV-flux was done in combination with cluster target characterization. Circularly polarized laser light instead of linear polarization results in enhanced emission which is probably caused by electrons gaining higher energies by the polarization dependent optical field ionization process. Maximum emission in dependence on adjustable cluster size can be attributed to the effective influence of collisional heating in this rare gas cluster target. The high laser energy to EUV-emission conversion efficiency at 13.4 nm of up to 0.8 % in 2π sr and 2.2 % bandwidth demonstrates an attractive application potential.