Berlin 2001 – wissenschaftliches Programm

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P: Plasmaphysik

P IV: HV IV

P IV.1: Hauptvortrag

Dienstag, 3. April 2001, 15:30–16:00, 2053

Diagnostics of molecular plasmas for thin film deposition — •Jürgen Meichsner — Ernst-Moritz-Arndt-Universität Greifswald, Institut für Physik, Domstraße 10a, D-17489 Greifswald, Germany

The knowledge about chemical reactions in non-isothermal molecular plasmas and the irreversible plasma surface interaction are of fundamental interest for better understanding of thin film formation at discharge electrodes, walls and immersed substrates. In many cases the plasma enhanced chemical vapour deposition is optimised by variation of process parameters, e.g. power input, total pressure, gas flow, gas composition, substrate bias and temperature. The main task in the experimental investigation of reactive plasmas is the gathering of plasma species and the simultaneous characterisation of surface processes in situ and real time. In organosilicone and fluorocarbon plasmas the analysis of neutral transient species and stable reaction products are investigated by means of mass spectrometry. Spectroscopic methods like optical emission spectroscopy, laser induced fluorescence spectroscopy and IR tunable diode laser absorption spectroscopy can be applied for analysis of atomic and molecular reactive species. The analysis of thin film formation by means of FTIR spectroscopy (IRRAS, ATR, fibre based ATR) in combination with ellipsometry and microgravimetry allows the study of deposition kinetics and thin film characterisation.