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DPG

Berlin 2001 – scientific programme

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Q: Quantenoptik

Q 23: Poster: Application of Short Pulses

Q 23.2: Poster

Thursday, April 5, 2001, 12:30–15:00, AT2

Optimization of the EUV yield from laser-produced plasma — •Stefan Düsterer, Wolfgang Ziegler, Christian Ziener, Heinrich Schwoerer, and Roland Sauerbrey — Inst. für Optik und Quantenelektronik, Uni Jena

Extreme ultraviolet (EUV) lithography is currently the most promising approach to produce sub 50 nm structures for computer chips on an industrial scale. Our goal is the enhancement of the efficiency of laser-based EUV sources.
An intensive laser pulse focused onto a water droplet (Ø 20 µm) produces a plasma. The O+5 ions from the plasma emit 13 nm EUV radiation. The conversion efficiency (CE) from laser light in to EUV radiation could be significantly (factor 2 to 7) increased by adjusting the laser parameters to the droplet size. The CE was was measured for laser pulse duration from 200 fs to 6 ns and for each pulse duration the pulse energy was varied from 20 mJ to 200 mJ. A distinct maximum for the CE was found for a pulse length of 120 ps and an energy of 50 mJ. The position of both maxima can be explained by a theoretical model.
We showed for the first time that the EUV CE for a certain droplet volume shows a maximum for one certain pulse duration and for one pulse energy. This result is useful in designing a EUV source meeting the high demands of the industry.

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