Berlin 2001 – scientific programme

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Q: Quantenoptik

Q 26: Application of Short Pulses I

Q 26.1: Invited Talk

Thursday, April 5, 2001, 15:45–16:15, H 2013

Extreme UV emission from laser irradiated water droplets: Recent attempts to optimize the efficiency. — •Heinrich Schwoerer, Stefan Düsterer, Christian Ziener, Wolfgang Ziegler, and Roland Sauerbrey — Institut für Optik und Quantenelektronik, Universität Jena, Max-Wien-Platz 1 07743 Jena

Extreme UV radiation around λ = 13 nm will be the light of the future lithography technology which will be able to generate semiconductor structures if dimensions well below 50 nm. However, the optimum source of the EUV radiation is not yet found. High performance in terms of efficiency, stability, debris, source size, service-free operation, and finally absolute power must be guaranteed. Line emissions of laser produced plasmas, e.g. from oxygen or xenon, is a promising radiation for EUV lithography which can fulfil most of the above mentioned criteria. We will discuss the current status of research and development of laser-produced EUV radiation, in particular recent work on the optimization of efficiency. And finally, laser EUV sources will be compared with other potential techniques.