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Q: Quantenoptik
Q 31: Poster: Laser
Q 31.12: Poster
Freitag, 6. April 2001, 12:30–15:00, AT2
Diode-pumped self-Q-switched single frequency 946nm / 473nm Nd,Cr:YAG microchip laser — •Volker Gaebler1, Hans J. Eichler1, and Zhiguo Zhang2 — 1Optical Institute, Technical University Berlin, Str. d. 17. Juni 135, 10623 Berlin, Germany — 2Laboratory of Optical Physics and Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China
We report a stable low threshold self-Q-switched diode pumped 946nm Nd,Cr:YAG microchip laser operating in single frequency and fundamental transversal mode. The output characteristics of the microchip laser have been investigated under cw and pulsed pumping. The Q-switched pulses had a duration (FWHM) of 3.7ns and a pulse energy of 0.9µJ corresponding to a peak power of 240W. The slope efficiency of the infrared laser was 15%. Combining the infrared microchip and an external frequency doubler 473nm pulses with an energy of 0.12µJ and a peak power of 26W were achieved for 150W input pulses, corresponding to a conversion efficiency of 18%. Intra-cavity frequency doubling experiements of the self-Q-switched laser are under development. V. Gaebler’s e-mail address is gaebler@physik.tu-berlin.de.