Berlin 2001 – wissenschaftliches Programm
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Q: Quantenoptik
Q 37: Optical Applications II
Q 37.1: Vortrag
Freitag, 6. April 2001, 17:30–17:45, H 3010
Bandwidth narrowing of a three-stripe diode laser by injection-locking — •Feng Wang, Andreas Hermerschmidt, Peter Pogany, and Hans-Joachim Eichler — Optisches Institut P1-1, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin
The bandwidth of a diode laser array consisting of three initially uncoupled stripes is narrowed by both injection-locked to a master diode laser and self-injection with the optical feedback using an external cavity. The maximum output power of the single-mode master laser is 50 mW. Because of the so-called No-dqsmileNo-dq effect of the three stripes and the limited of the master laser, the bandwidths of the three stripes can not be narrowed simultaneously by direct injection using an optical setup involving diffractive beam-splitters and collimators. However, using two photorefractive crystals (Co:BaTiO3 and Rh:BaTiO3) as a mutually pumped phase-conjugator, all three stripes are locked completely at a current of 2.25 times the threshold current Ithr. The bandwidth is narrowed from more than 3 nm to 0.04 nm with an available output of 1.5 W. In the self-injection experiment, the optical feedback is provided by an external cavity using a grating, and an etalon is inserted into the cavity to select the wavelength of the feedback. The reflected beam from the etalon serves as the output. All three stripes are locked completely at the drive current up to 2.5 Ithr. An available output of 1.3 W is obtained with the narrowed bandwidth of about 0.12 nm.