Bonn 2001 – scientific programme
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T: Teilchenphysik
T 602: Halbleiterdetektoren 6
T 602.4: Talk
Thursday, March 29, 2001, 10:45–11:00, HS IX
Performance of single elements of silicon detectors with integrated field effect transistor (DEPFET) and continuous clear mechanism — •Adrian Niculae1, Martin Holder1, Peter Klein2, and Gerhard Lutz2 — 1Universität Gesamthochschule Siegen, Fachbereich 7 - Physik, Emmy-Noether-Campus D 310, Walter-Flex-Straße 3, D-57068 Siegen — 2MPI Halbleiterlabor, Otto-Hahn-Ring 6, D-81739 München
Depleted Field Effect Transistors (DEPFET) with three different types of a continuous clear structure were investigated statically and dynamically in order to obtain a detailed understanding of the clear mechanism. The low noise capability of these devices is discussed in applications with various rate requirements.