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AM: Magnetismus

AM 11: Magnetowiderstand II

AM 11.10: Vortrag

Mittwoch, 28. März 2001, 16:15–16:30, S 5.4

Magneto Tunnelling Injection Device (MAGTID) — •Hermann Kohlstedt, Simon Stein, and Rolf Schmitz — Forschungszentrum Jülich, Institut für Festkörperforschung

A device consisting of a stack of two ferromagnetic tunnelling junctions with access to the intermediate electrode has been developed. The basic layer structure is Co/AlOx/NiFe/AlOx/Co where AlOx is thermally oxydized aluminium. The thickness of the intermediate layer is as thin as 5.5 nm. The tunnel magneto resistance effect (TMR) of one junction was measured while the second junction was used as a spin injector. We observed variations of the magnetoresistance with increasing injection current. The TMR value decreased by up to 30% from the original value without injection current. We will discuss the results in the framework of non-equilibrium spin accumulation in the intermediate layer.