Hamburg 2001 – scientific programme

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DS: Dünne Schichten

DS 13: Schichtherstellung III

DS 13.1: Talk

Tuesday, March 27, 2001, 11:00–11:15, S 13/14

Diffusional transport and nitride growth kinetics during ion nitriding of Al — •Temenoujka Telbizova, S. Parascandola, R. Gunzel, E. Richter, and W. Moeller — P.O. Box 51 01 19; D-01314 Dresden

The mechanism of diffusional transport during ion nitriding of Al has been investigated using marker and isotope sequence techniques. The nitridation has been performed at ion energy of 1.6 keV and substrate temperature of 400 C. Ion beam analyses such as Rutherford Backscattering Spectrometry (RBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA) have been used for data evaluation. The obtained results reveal that an AlN layer grows due to Al diffusion from the underlying bulk towards the surface rather than of inward N diffusion. Furthermore, the growth kinetics of the nitride layer has been studied by performing a series of experiments at fixed ion beam parameters and different temperatures of 250 C, 300 C, 350 C and 400 C. For each of these temperatures the nitriding time have been varied from 5 up to 60 min. Depending of the experimental conditions, two cases of nitriding kinetics can be distinguished: (i) controlled by the delivery and sputtering of N ions or (ii) by the diffusion of Al atoms. Additionally, the obtained nitride layers have been investigated with respect to their phase composition and surface morphology by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM).

keywords: Al, ion nitriding, nitride layer, growth kinetics