Hamburg 2001 – scientific programme

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DS: Dünne Schichten

DS 17: Ionenimplantation III

DS 17.3: Talk

Thursday, March 29, 2001, 11:45–12:00, S 5.1

Epitaxial regrowth of Na-implanted α-quartz — •S. Dhar¹, M. Lang¹, K. P. Lieb¹, T. Sajavaara² und J. Keinonen² — ¹Universität Göttingen, II. Physikalisches Institut, Bunsenstrasse 7/9, D-37073 Göttingen — ²Accelerator Laboratory, University of Helsinki, P.O. Box 43, FIN-00014, Finland.

The adjustment of the refractive index via ion implantation is one of the promising techniques for fabricating optical wave-guides. Recent studies [1-4] on Cs and Li implanted α-quartz have shown that the damaged SiO₂ layers can be recrystallized during annealing in air or in oxygen. Here, we have studied the role of oxygen during the epitaxial regrowth processes in Na-implanted α-quartz. The damage was introduced by 50 keV Na ion implantation at different fluences. The samples were annealed in the temperature range of 500-900^oC in ¹⁸O in order to monitor the diffusion of external oxygen during regrowth processes. Depth profiling of ²³Na and ¹⁸O was done via TOF-ERDA with 54 MeV I ions. The crystallinity of the SiO₂ matrix was monitored via RBS-channeling using 900 keV α-particle.

[1] F. Roccaforte, W. Bolse, K. P. Lieb, Appl. Phys. Lett. 73 (1998) 1349.

[2] F. Roccaforte, S. Dhar, F. Harbsmeier, K. P. Lieb, Appl. Phys. Lett. 75 (1999) 2903.

[3] F. Roccaforte, F. Harbsmeier, S. Dhar, K. P. Lieb, Appl. Phys. Lett. 76 (2000) 3709.

[4] M. Gustafsson, F. Roccaforte, J. Keinonen, W. Bolse, L. Ziegeler, K. P. Lieb, Phys. Rev. B 65 (2000) 3327.