Hamburg 2001 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 30: Schichteigenschaften VII

DS 30.4: Vortrag

Freitag, 30. März 2001, 12:45–13:00, S 13/14

Atomic Structure of Interfaces Between Crystalline Silicon and amorphous Germanium — •M. Seibt¹, N.I. Borgardt², and B. Plikat³ — ¹IV.Physikalisches Institut der Universität Göttingen — ²permanent address: Moscow Inst. of Electr. Technology, Moscow, Russia — ³present address: Infineon Technologies, Munich

Interfaces between materials of different structure and composition play an increasing role in present day semiconductor technology. Various experimental and theoretical techniques are available for the determination and description of the atomic structure of interfaces between crystalline solids. The situation is different for interfaces between crystalline and non-crystalline (amorphous) materials and, consequently, their structural properties are far less well understood.

We will present results of a high-resolution electron microscopy investigation of interfaces between crystalline silicon and amorphous germanium which were produced by molecular beam epitaxy at room temperature. The interface structure is described in terms of a two-dimensional distribution function which can be extracted from experimental images. As first results, the width of these interfaces is estimated and the effect of the volume misfit between silicon and germanium on the amorphous structure is discussed.