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Hamburg 2001 – scientific programme

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DS: Dünne Schichten

DS 31: Postersitzung

DS 31.12: Poster

Tuesday, March 27, 2001, 16:30–17:30, Foyer Saal 4

Track formation in KTP by MeV implantation of light ions — •F. Schrempel1, W. Wesch1, Th. Opfermann1, and Th. Höche21Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena — 2Friedrich-Schiller-Universität Jena, Institut für Glaschemie, Fraunhoferstrasse 6, 07743 Jena

In various insulators damaging and amorphous track formation due to electronic energy deposition has been observed after swift heavy ion irradiation. In KTP we have recently observed the formation of amorphous tracks after 150 MeV Kr-irradiation. In the present paper the damaging of KTP due to light ion irradiation with energies in the MeV region is studied. In the case of 4 MeV N- and 3 MeV B-implantation in the near surface region, i.e. in the region of dominating electronic energy deposition, by means of RBS a dose-dependent damage production up to the formation of an amorphous layer at ion fluences of 3x1013 cm−2 and 1x1014 cm−2, respectively, was found. Contrary to that, Li-implantation does not result in a remarkable damage formation near the surface up to ion fluences in the order of 1015 cm−2.
By means of XTEM in the damaged layers below the amorphization threshold amorphous tracks were observed in the case of N-implantation. The diameter of the tracks at the surface is about 4 nm and diminishes with increasing depth. The track density increases with the ion fluence until an amorphous layer is formed. The electronic energy deposition per ion for N-implantation at the surface is about 2 keV/nm which is obviously higher than the treshold value for the detection of amorphous tracks.

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