Hamburg 2001 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 7: Schichtwachstum I

DS 7.2: Vortrag

Montag, 26. März 2001, 15:30–15:45, S 13/14

NUCLEATION, GROWTH AND INTERFACE FORMATION BY VAPOR DEPOSITION OF NOBLE METALS ON DIFERENT LOW-K POLYMERS — •V. Zaporojtchenko, K. Behnke, J. Erichsen, A. Thran, T. Strunskus und F. Faupel — Technische Fakultät der Universität Kiel, Lehrstuhl für Materialverbunde, Kaiserstr. 2, 24143 Kiel

Polymers are seen as potential low-permittivity (low-k) dielectrics for on-chip interconnects. Therefore, much effort has been made to understand and control the interfacial microstructure. The structure and properties of metal-polymer interfaces depends strongly on the deposition conditions and particularly the early deposition process plays a crucial role. Here the condensation coefficient C of noble metals on low-k dielectrics can be extremely low even at room temperature[1]. The condensation and diffusion behavior of metal atoms in the initial deposition regime determines the nucleation and growth behaviour of the metal film. The weak interaction of noble metals with untreated polymers generally leads to Volmer-Weber type of growth with a critical nuclei consisting of only one metal atom. The nucleation probability and therefore the cluster density on the polymer surface can be varied over a wide range by a choice of the metal deposition conditions as well as metal-polymer interection. Ion treatment of the polymer surface or the predeposition of a reactive metal also allows to vary the condensation coefficient and the cluster density in a controlled manner .

[1] A. Thran, M. Kiene, V. Zaporojtchenko, and F. Faupel, Phys. Rev. Lett. 82, 1903 (1999)