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HL: Halbleiterphysik

HL 10: Grenz- und Oberfl
ächen

HL 10.4: Vortrag

Montag, 26. März 2001, 16:15–16:30, S16

Segregation of Phosphorus to SiO₂/Si(001) Interfaces — •Jarek Dabrowski, Victor Zavodinsky, Hans-Joachim Müssig, and Konstantin Ignatovich — IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany

Dopant atoms segregate to SiO₂/Si(001) interfaces. This affects the distribution of dopants and is a potential problem in manufacture of submicron microelectronic devices. Using phosphorus as a typical example of a donor and guided by results of ab initio calculations, we present a complete model of donor segregation. The model extends our original model [1] to the case of P concentrations in the itermediate regime (around 10¹³/cm²), that is, to the case of the most importance in technological applications. We show that in this concentration regime, the segregation occurs to sites related with interface roughness and is mediated by diffusion and self-annihilation of Si dangling bonds. It follows that hardening the interface against diffusion of dangling bonds (for example, by nitridation) should reduce the P-trapping efficiency of SiO₂/Si(001) boundaries.

[1] J. Dabrowski, H.-J. Müssig, R. Baierle, M. J. Caldas, V. Zavodinsky, J. Vac. Sci. Technol. A (2000).