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Hamburg 2001 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 10: Grenz- und Oberfl
ächen

HL 10.8: Vortrag

Montag, 26. März 2001, 17:15–17:30, S16

Characterization of the ZnSe/CuGaSe2 Interface Using UHV Kelvin Probe Force Microscopy — •Thilo Glatzel1, Sascha Sadewasser1, Marin Rusu2, Arnulf Jäger-Waldau1, and Martha Ch. Lux-Steiner11Hahn-Meitner Institut, Berlin, GERMANY — 2State University of Moldova, Dept of Physics, Chisinau, MOLDOVA

To improve the efficiency of heterostructure solar cells based on chalcopyrite semiconductors a good understanding of the interface properties is crucial. By Kelvin Probe Force Microscopy it is possible to obtain laterally resolved images (resolution down to 20 nm) of the workfunction of semiconductor surfaces in addition and simultaneously to the topographical information usually obtained by non-contact AFM. ZnSe/CuGaSe2 interfaces were prepared by growing CuGaSe2 onto the (110) face of freshly cleaved ZnSe single crystals by different growth processes, i.e. CVD and MOCVD. On single CuGaSe2 grains we observed different workfunction values for different facets. At the ZnSe/CuGaSe2 interface, freshly cleaved in UHV, a smooth transition of the workfunction in a region of 2 µm at the interface was identified by studying the cross section of the heterojunction. Additionally a change in the crystalline structure of the ZnSe was observed. From the obtained workfunction data a schematic band diagram for the ZnSe/CuGaSe2 heterostructure is proposed.

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