Hamburg 2001 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 24: Poster II
HL 24.100: Poster
Thursday, March 29, 2001, 10:30–19:00, Rang S\ 3
Combined electrical and optical heating in thermal wave microscopy of semiconductor devices — •D. Dietzel1, H. H. Althaus1, B. K. Bein1, J. Pelzl1, C. Crell2, H. Roecken2, N. Trannoy3, and J.-S. Antoniow3 — 1Experimentalphysik III, Festkoerperspektroskopie, Ruhr-Universitaet Bochum — 2Experimentalphysik III, Ionenphysik, Ruhr-Universitaet Bochum — 3University of Reims, France
Insulating lines and channels implanted by focused ion beams on simox wafers have been investigated by thermal reflectance microscopy using optical and electrical excitation. In addition, the thermal structures of the implanted samples have been imaged by near field thermal microscopy. A very poor contrast in thermo-reflectance was observed with modulated optical pump only, whereas hot lines and hot spots can be visualized by modulated electrical heating. Insulating lines forming channels can only imaged by thermal reflectance microscopy with simultaneous optical and electrical excitation. Best contrast for the observation of the insulating lines adjacent to a channel are achieved by recording the reflectance signal at fourth harmonics of the optical and electrical pump. The results of supplementary obic measurements point towards a thermal origin of the double excited thermo-reflectance signal.
Work performed in the frame of the GRK 384.