Hamburg 2001 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 24: Poster II
HL 24.21: Poster
Donnerstag, 29. März 2001, 10:30–19:00, Rang S\ 3
Phase separation in c - InGaN / GaN double heterostructures — •Olaf Husberg, Alexandre Khartchenko, Thomas Frey, Donat As und Klaus Lischka — Department of Physics, University of Paderborn, D-33098 Paderborn, Germany
We report on the evidence of phase separation in c -
InGaN / GaN
double heterostructures grown by molecular beam epitaxy. The
double heterostructures were prepared with c - InxGa1−xN
layers with x = 0.13, x = 0.27 and x = 0.33.
For the characterization of the samples optical spectroscopy as well
as
high resolution X-ray diffraction have been used.
The high resolution reciprocal space maps give evidence of the
existence of an In-rich separated phase in the InGaN layer.
Information about the In-content
and the strain status of this phase has been obtained. By means
of Resonant Raman scattering the dot-like structure of the In-rich
phase
has been resolved [1].
The stability of the separated phase was investigated by annealing
experiments.
The optical properties of the In-rich phase were measured by
emission
and excitation luminescence spectroscopy.
[1] V. Lemos et al., Phys. Rev. Lett. 84, 3666 (2000)