Hamburg 2001 – scientific programme

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HL: Halbleiterphysik

HL 24: Poster II

HL 24.21: Poster

Thursday, March 29, 2001, 10:30–19:00, Rang S\ 3

Phase separation in c - InGaN / GaN double heterostructures — •Olaf Husberg, Alexandre Khartchenko, Thomas Frey, Donat As und Klaus Lischka — Department of Physics, University of Paderborn, D-33098 Paderborn, Germany

We report on the evidence of phase separation in c -  InGaN / GaN double heterostructures grown by molecular beam epitaxy. The double heterostructures were prepared with c - In_xGa_1−xN layers with x = 0.13, x = 0.27 and x = 0.33. For the characterization of the samples optical spectroscopy as well as high resolution X-ray diffraction have been used. The high resolution reciprocal space maps give evidence of the existence of an In-rich separated phase in the InGaN layer. Information about the In-content and the strain status of this phase has been obtained. By means of Resonant Raman scattering the dot-like structure of the In-rich phase has been resolved [1]. The stability of the separated phase was investigated by annealing experiments. The optical properties of the In-rich phase were measured by emission and excitation luminescence spectroscopy.

[1] V. Lemos et al., Phys. Rev. Lett. 84, 3666 (2000)