Hamburg 2001 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 24: Poster II
HL 24.26: Poster
Donnerstag, 29. März 2001, 10:30–19:00, Rang S\ 3
Defect generation and blistering studies of hydrogen implanted GaAs — •I. Radu, R. Scholz, M. Alexe, and U. Gösele — Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
Layer transfer by hydrogen implantation and wafer bonding is one of the promising approaches for materials integration allowing fabrication of complex heterostructures, which cannot be obtained by classical thin film deposition methods. The layer transfer process consists of three steps: a) hydrogen implantation of the donor wafer, b) direct bonding between donor and host wafer, and c) splitting performed mainly by thermal annealing. During hydrogen implantation many defects, i.e. self-interstitials and vacancies, are generated. Hydrogen atoms break the native bonds to form H-bonds. The passivated bonds and H2 molecules are subsequently generate micro-cracks, which during the thermal annealing induce either splitting or blistering. In order to find conditions for an optimal layer splitting of GaAs, the blister generation was studied for different H2+ implantation. The existence of blisters was examined by optical microscopy. The microstructures in the implanted regions were investigated by TEM, especially size, orientation and density of micro-cracks. Of particular interest was the question if surface parallel micro-cracks can preferably be formed under special implantation conditions.
shared