Hamburg 2001 – scientific programme
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HL: Halbleiterphysik
HL 24: Poster II
HL 24.56: Poster
Thursday, March 29, 2001, 10:30–19:00, Rang S\ 3
Antidot arrays in GaAs/AlxGa1−xAs heterostructures prepared by Au+- Focused Ion Implantation — •D. Diaconescu, S. Hoch, D. Reuter, and A. D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum
Antidot arrays in samples with two dimensional electron gases (2DEG) have been realised by focused ion beam implantation using Au+ ions. We have studied the influence of the ion dose and the implanted pattern on the electron transport. Four terminal devices with dimensions below the mean free path of the electrons have been used. Before implantation, the electron transport in such samples is ballistical. The ballistic features of the electron transport decrease with increasing ion dose. From the measurements of the longitudinal resistance in magnetic field we have estimated the mean free path after implantation and the scattering cross-section corresponding to an implanted Au+ ion. In the range of higher magnetic fields (100-200mT), well defined Weiss oscillations have been observed. We acknowledge the support from GRK384.